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1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212
The Communications Edge TM Product Information
Product Features
x 1800 - 2200 MHz x 26 dB Gain x +30 dBm P1dB
Product Description
The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is housed in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.
Functional Diagram
Vc1 1 Vbias1 2 RF In 3 8 N/C 7 Vcc2 / RF Out 6 Vcc2 / RF Out 5 N/C
x +46 dBm Output IP3 x Internal Active Bias
x +5V Single Positive Supply
Vbias2 4
AH212-S8G
Function Vc1 Input Output Vbias1 Vbias2 Vcc2 GND N/C or GND Pin No. 1 3 6, 7 2 4 6, 7 Backside Paddle 5, 8
x Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for various current and next generation wireless technologies SOIC-8 Package
Applications
x Mobile Infrastructure
such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply.
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power
@ -45 dBc ACLR
Typical Performance (1)
Units Min
MHz MHz dB dB dB dBm dBm dB dBm mA V 1800 2140 25 25 9 +29.5 +46 6.0 +21 400 5
Typ
Max
2200
Parameters
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB
Typical
1960 25.8 15 11 +30 +48.5 +23.5 +21 5.5 6.0 +5 V @ 400 mA 2140 25.0 25 9 +29.5 +46
W-CDMA Channel Power
@ -45 dBc ACLR
Operating Current Range , Icc Device Voltage, Vcc
Noise Figure Supply Bias
1. Test conditions unless otherwise noted: 25C, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature
Parameter
-40 to +85 qC -65 to +150 qC +26 dBm +7 V 900 mA 6W +250 C
Rating
Ordering Information
Part No.
AH212-S8G AH212-S8PCB1960 AH212-S8PCB2140
Description
(lead-free/green/RoHS-compliant SOIC-8 Package)
1 Watt, High Gain InGaP HBT Amplifier
1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com

Web site: www.wj.com
Page 1 of 5 November 2005
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212
Gain
The Communications Edge TM Product Information
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads)
S11
DB(|S(2,1)|) AH212
0. 4
1.0
0.8
2. 0
6 0.
0.6
35 30 25 Gain (dB) 20
0.8
1.0
0 3.
2. 0
0 4.
10 .0
10.0
5 0.05 0.55 1.05 1.55 Frequency (GHz) 2.05 2.55 3
.4 -0
.4 -0
.0 -2
-0 .6
S(1,1) AH212
Swp Min 0.05GHz
S(2,2) AH212
-0 .6
-0.8
-2
.0
Swp Min 0.05GHz
-0.8
-1.0
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increment. S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44
-130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11
17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51
65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98
-64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27
122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70
-2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34
-1.0
-145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" FR4, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitor -C7. The markers and vias are spaced in 0.050" increments.
Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
Web site: www.wj.com
Page 2 of 5 November 2005
-4 .0 -5 .0
-3 .0
-4 .0 -5 .0
10
- 0.2
- 0.
2
-10. 0
-1 0. 0
15
10.0
0.2
0.4
0.6
0.8
0.2
4.0
4.0
5.0
1.0
2.0
3.0
5.0
1.0
2.0
3.0
0.4
0.6
0.8
0
0
0 .2
5. 0
0. 4
-3 .0
S22
Swp Max 3GHz Swp Max 3GHz
0 3.
0 4.
5. 0
0 .2
10.0

1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212
The Communications Edge TM Product Information
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25 qC
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
Vcc = +5 V
1960 MHz 25.8 dB -15 dB -11 dB +30 dBm +48.5 dBm +23.5 dBm 5.5 dB +5 V 400 mA
PORT P=1 Z=5 0 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF
CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 p F C AP ID=C9 C =47 p F
CAP ID=C5 C=1 000 p F
CAP ID=C6 C=1000 pF
RES ID=R2 R=0 O hm
IND ID=L1 L=18 nH
IN D ID =L2 L=18 nH Size 0805
85 7 6 6 7 5 8
1 2 NET="AH212" 3 4
CA P ID=C8 C=47 p F
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current
RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm
TLINP ID=TL1 Z0=50 Ohm L=125 m il Eeff=4.6 Lo ss=0 F0=0 M Hz
PO RT P=2 Z=50 Ohm CAP ID=C 7 C=2.7 pF
All passive components are of size 0603 unless otherwise noted. VBC = +5 V
CAP ID=C4 C=1000 pF
C7 is placed bet ween silkscree n marke r "2" and "3 " on W J's e val Board or @ 14 de gre es at 1.96G Hz away from pins 6 and 7.
28 27 S21 (dB)
S21 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 1930
S11 vs. Frequency +25 C -40 C +85 C
0 -5 S22 (dB) -10 -15 -20 -25 1930
S22 vs. Frequency
26 25 24 23 1930
+25 C -40 C +85 C
+25 C
-40 C
+85 C
1940
1950
1960
1970
1980
1990
1940
1950 1960 1970 1980 1990 Frequency (MHz)
OIP3 vs. Frequency
+25C, +15 dBm/tone
1940
1950 1960 1970 1980 1990 Frequency (MHz)
Frequency (MHz)
C ircuit bo areo izedat 1960M z ards ptim H
P Bvs. F u cy 1d req en
31 30 P1dB (dBm) 29 28 27 26 1930
55 50 45 40 35 1930
55 50 45 40 35 -40
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
OIP3 vs. Temperature
OIP3 (dBm)
-40 C
1940 1950
+25 C
1960 1970
+85 C
1980 1990
Freq cy(M z) uen H
freq. = 1960 MHz, 1961 MHz, +25C
1940
1950 1960 1970 Frequency (MHz)
1980
1990
OIP3 (dBm)
-15
10 35 Temperature ( C) ACPR vs. Channel Power
60
85
OIP3 vs. Output Power
Noise Figure vs. Frequency
7 6
55 50
-40 -45 ACPR (dBc) -50 -55 -60 -65 -70
1940 1950 1960 1970 1980 1990
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW 1960 MHz ,
OIP3 (dBm)
45 40 35 12 13 14 15 16 Output Power (dBm) 17 18
NF (dB)
5 4 3 2 1930
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
18
19
20
21
22
23
24
25
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice.

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 5 November 2005
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212
The Communications Edge TM Product Information
2140 MHz Application Circuit (AH212-S8PCB2140)
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
2140 MHz 25 dB -25 dB -9 dB +29.5 dBm +46 dBm +21 dBm 6.0 dB +5 V 400 mA
PORT P=1 Z=5 0 Ohm CAP ID=C1 C=47 pF C AP ID =C 2 C =47 pF
Vcc = + 5 V
CAP ID=C11 C=4.7 E6 pF SIZ E 1210 CAP ID =C 10 C=1000 pF CAP ID=C9 C=47 p F
CAP ID=C5 C=100 0 pF
CAP ID=C6 C=1000 p F
RES ID=R2 R=0 Oh m
IN D ID =L 1 L=18 nH
Channel Power
1 2 NET="AH 21 2" 3 4
85 7
IND ID=L2 L=1 8 nH Size 0805
(@-45 dBc ACLR, W-CDMA, Test model 1 +64 DPCH, 5MHz offset)
6 7
CAP ID =C8 C=47 pF
6
Noise Figure Device / Supply Voltage Quiescent Current
58
RES ID=R1 R=1 0 Ohm RES ID=R3 R=75 Ohm
TLINP ID=TL 1 Z0=50 Oh m L=110 mi l Eeff=4.6 Loss=0 F0=0 MH z
PORT P=2 Z=50 Ohm C AP ID=C 7 C =2 .4 p F
All passive components are of size 0603 unless otherwise noted. VBC = +5 V
CAP ID=C4 C=1000 pF
C7 is placed at silkscreen marker "2" on WJ's eval board or @ 12.2 deg at 2.14GHZ away fr om pins 6 and 7.
27 26 S21 (dB)
S21 vs. Frequency
0 -5 -10 S11 (dB) -15 -20 -25 -30 2160 2170 -35 2110 2120
S11 vs. Frequency +25 C -40 C +85 C
0 -5 S22 (dB) -10 -15 -20 -25 2110
S22 vs. Frequency
25 24 23 22 2110
+25 C -40 C +85 C
+25 C
-40 C
+85 C
2120
2130
2140
2150
2130 2140 2150 2160 2170 Frequency (MHz)
OIP3 vs. Frequency
+25C, +15 dBm/tone
2120
2130 2140 2150 2160 2170 Frequency (MHz)
Frequency (MHz)
Circuit boards are optimized at 2140 MHz
P1dB vs. Frequency
30 29 P1dB (dBm) 28 27 26 25 2110
55 50 45 40 35 2110
55 50 45 40 35 -40
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
OIP3 vs. Temperature
OIP3 (dBm)
-40 C
2120 2130
+25 C
2140 2150
+85 C
2160 2170
Frequency (MHz)
freq. =2140M z, 2141M z, +25C H H
2120
2130 2140 2150 Frequency (MHz)
2160
2170
OIP3 (dBm)
-15
10 35 Temperature ( C)
60
85
O 3vs. O tpu P w IP u t o er
Noise Figure vs. Frequency
8 7 NF (dB) 6 5 4 3 2110 ACLR (dBc) -40 -45 -50 -55 -60 2120 2130 2140 2150 2160 2170
55 50 45 40 35 12
3GPP W -CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
ACLR vs. Channel Power
OIP3 (dBm)
-40 C
+25 C
+85 C
18 19
-40 C
20
+25 C
21
+85 C
22
13
14 15 16 O tpu P w (dB ) u t o er m
17
18
Frequency (MHz)
Output Channel Power (dBm)
Specifications and information are subject to change without notice.

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 5 November 2005
1 Watt High Linearity, High Gain InGaP HBT Amplifier
AH212
The Communications Edge TM Product Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260qC reflow temperature) and lead (maximum 245qC reflow temperature) soldering processes.
AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information Outline Drawing
Product Marking
The component will be marked with an "AH212G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
MSL Rating: Level 2 at +260" C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Configuration / Land Pattern
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc
Rating
-40 to +85q C 33 q C / W 156 q C
Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage and the current applied. It can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature.
Specifications and information are subject to change without notice.

WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
! (c)
ESD Rating: Value: Test: Standard:
Class IV Passes Charged Device Model (CDM) JEDEC Standard JESD22-C101
|
ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
Page 5 of 5 November 2005

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